POWER SEMICONDUCTOR MODULE HAVING A METALLIC CLIP WITH ULTRASONICALLY WELDED CONTACT REGIONS AND METHOD OF PRODUCING THE POWER SEMICONDUCTOR MODULE

A power semiconductor module includes: a first substrate; a first power semiconductor die attached to the first substrate; and a first metallic clip having a plurality of first contact regions ultrasonically welded to either a first metallic region of the first substrate or a first metallic region of the first power semiconductor die. The first contact regions of the first metallic clip are laterally separated from one another by a first gap in the first metallic clip. Additional power semiconductor module embodiments and corresponding methods of production are also described herein.