METHOD FOR FABRICATING MASK, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME

A method for fabricating a mask for manufacturing a semiconductor device is provided. The method includes generating a first target pattern including a step portion having an inner corner and an outer corner that are spaced apart in a vertical direction; generating a second target pattern from the f...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	Kim, Bong Keun, Park, Joong Un, Kim, Yong-Ah, Kang, Byung Jun, Youn, Hyung Joo
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	A method for fabricating a mask for manufacturing a semiconductor device is provided. The method includes generating a first target pattern including a step portion having an inner corner and an outer corner that are spaced apart in a vertical direction; generating a second target pattern from the first target pattern; performing optical proximity correction on the second target pattern to generate a final pattern; and fabricating the mask using the final pattern. Generating the second target pattern includes forming a recess extending inwardly and in a diagonal direction relative to the inner corner of the step portion; and forming a protrusion protruding outwardly and in the diagonal direction relative to the outer corner of the step portion.