Ferroelectric Device and Methods of Fabrication Thereof

A semiconductor device includes a first dielectric layer, a first conductive feature in the first dielectric layer, a second dielectric layer over the first dielectric layer, an ferroelectric random-access memory (FeRAM) cell in the second dielectric layer, a third dielectric layer over the second dielectric layer, and a second conductive feature in the third dielectric layer, the second conductive feature being electrically coupled to the top electrode. The FeRAM cell includes a bottom electrode contacting the first conductive feature, a ferroelectric material layer completely covering an upper surface of the bottom electrode, and a top electrode on the ferroelectric material layer.