SEMICONDUCTOR DEVICES

A semiconductor device may include a bit line on a substrate, a bonding layer stacked on the bit line, a first conductive connection pattern stacked on the bonding structure layer, so that the bonding layer is vertically between the bit line and the first conductive layer, a channel stacked on the f...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Yim, Sungsoo, Park, Taejin, Kim, Taejin
Format: Patent
Sprache:eng
Schlagworte:
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Beschreibung
Zusammenfassung:A semiconductor device may include a bit line on a substrate, a bonding layer stacked on the bit line, a first conductive connection pattern stacked on the bonding structure layer, so that the bonding layer is vertically between the bit line and the first conductive layer, a channel stacked on the first conductive connection pattern and including a single crystalline semiconductor material, a second conductive connection pattern contacting the bit line and the first conductive connection pattern, a gate electrode on the bit line and being spaced apart from the channel and the first conductive connection pattern, and a capacitor stacked on the channel.