SEMICONDUCTOR DEVICES
A semiconductor device may include a bit line on a substrate, a bonding layer stacked on the bit line, a first conductive connection pattern stacked on the bonding structure layer, so that the bonding layer is vertically between the bit line and the first conductive layer, a channel stacked on the f...
Gespeichert in:
Hauptverfasser: | , , |
---|---|
Format: | Patent |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | A semiconductor device may include a bit line on a substrate, a bonding layer stacked on the bit line, a first conductive connection pattern stacked on the bonding structure layer, so that the bonding layer is vertically between the bit line and the first conductive layer, a channel stacked on the first conductive connection pattern and including a single crystalline semiconductor material, a second conductive connection pattern contacting the bit line and the first conductive connection pattern, a gate electrode on the bit line and being spaced apart from the channel and the first conductive connection pattern, and a capacitor stacked on the channel. |
---|