POWER ELECTRONIC DEVICE WITH IMPROVED ELECTRICAL PERFORMANCES

An electronic device includes a semiconductor body of SiC having an upper surface and a lower surface opposite to each other along a first axis and including: a drain substrate extending into the semiconductor body starting from the bottom surface and with a first electrical conductivity type; a drift layer extending into the semiconductor body starting from the upper surface and with the first electrical conductivity type and a second dopant concentration; a body region accommodated in the drift layer; and a source region accommodated in the body region. The electronic device further includes a gate structure on the upper surface. The semiconductor body further comprises at least one doped pocket region which is buried in the drift layer, has a second electrical conductivity type and is aligned along the first axis with the source region and/or with the gate structure.