METHOD FOR FABRICATING CHANNEL STRUCTURES INCLUDING DOPED 2D MATERIALS FOR SEMICONDUCTOR DEVICES

A method includes: providing a substrate, the substrate comprising an upper surface and a raised semiconductor structure protruding upwardly from the upper surface; forming a doped two-dimension (2D) material layer on the raised semiconductor structure; forming a semiconductor layer on the doped 2D material layer; removing a portion of the semiconductor layer and a portion of the doped 2D material layer lateral to the raised semiconductor structure to expose the upper surface of the substrate; forming an interfacial layer on the semiconductor layer; and thermally bonding the interfacial layer with the semiconductor layer.