SEMICONDUCTOR DEVICE
Provided is a semiconductor device comprising a semiconductor substrate comprising: a gate trench portion having a longitudinal side in a first direction at the upper surface of the semiconductor substrate; an emitter region of the first conductivity type which is provided to be exposed on the upper...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | Provided is a semiconductor device comprising a semiconductor substrate comprising: a gate trench portion having a longitudinal side in a first direction at the upper surface of the semiconductor substrate; an emitter region of the first conductivity type which is provided to be exposed on the upper surface in the semiconductor substrate, is in contact with the gate trench portion, and has a length in the first direction that is longer than a length in a second direction orthogonal to the first direction; a base region of a second conductivity type which is provided between the emitter region and the drift region and is in contact with the gate trench portion: an emitter electrode provided above the upper surface of the semiconductor substrate; and a resistance portion provided between the emitter region and the emitter electrode. |
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