PHOTOELECTRIC CONVERSION ELEMENT AND IMAGING DEVICE

[Object] To suppress crosstalk without reducing sensitivity.[Solution] A photoelectric conversion element includes: a first semiconductor layer of a first conductivity type containing a compound semiconductor material; a second semiconductor layer of a first conductivity type containing a compound semiconductor material having a larger band gap than the first semiconductor layer and stacked on a side of the first semiconductor layer opposite to the light incidence surface; a third semiconductor layer of a first conductivity type containing a compound semiconductor material having a larger band gap than the first semiconductor layer and stacked on the light incidence surface side of the first semiconductor layer; a first diffusion layer of a second conductivity type disposed to penetrate the second semiconductor layer from a side of the second semiconductor layer opposite to the light incidence surface and extend into the first semiconductor layer; a first electrode in contact with the first diffusion layer on the side of the second semiconductor layer opposite to the light incidence surface; a second diffusion layer of a second conductivity type disposed in a depth direction of the third semiconductor layer from a light incidence surface side of the third semiconductor layer; a second electrode in contact with the second diffusion layer on the light incidence surface side of the third semiconductor layer; and an insulating layer disposed between the second electrode and the third semiconductor layer.