SNAPBACK ELECTROSTATIC DISCHARGE (ESD) CIRCUIT, SYSTEM AND METHOD OF FORMING THE SAME

SNAPBACK ELECTROSTATIC DISCHARGE (ESD) CIRCUIT, SYSTEM AND METHOD OF FORMING THE SAME

A method of manufacturing a snapback electrostatic discharge (ESD) protection circuit includes fabricating a first well in a substrate, the first well extending in a first direction, and having a first dopant type, fabricating a drain region of a transistor in the first well, the drain region having...

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Bibliographische Detailangaben
Hauptverfasser: SU, Yu-Ti, LIN, Wun-Jie, HSU, Chia-Lin, YEH, Yu-Hung
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
GENERATION
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A method of manufacturing a snapback electrostatic discharge (ESD) protection circuit includes fabricating a first well in a substrate, the first well extending in a first direction, and having a first dopant type, fabricating a drain region of a transistor in the first well, the drain region having a second dopant type, fabricating a source region of the transistor in the first well, the source region extending in the first direction, having the second dopant type, and being separated from the drain region in a second direction, fabricating a second well in the first well, the second well extending in the first direction, having the second dopant type, and being adjacent to a portion of the drain region, and fabricating a gate region of the transistor, the gate region being between the drain region and the source region, and being over the first well and the substrate.