SEMICONDUCTOR DEVICE

In the present invention, a second MOSFET comprises: a body region; a drain region extending in the y direction; a first well region formed away from the drain region in the x direction; a gate electrode formed on a gate insulating film and a field oxide film; a source region formed on the surface of a first well region; an exposed region formed at a position different from the source region in the first well region as viewed from the z direction; a first contact part joined to the source region; a second contact part Schottky-joined to the exposed region; a third contact part joined to the gate electrode; and source wiring that electrically interconnects the first contact part, the second contact part, and the third contact part.