SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

A semiconductor device and a method of fabricating the same are provided. The semiconductor device includes a substrate including a frontside on which an active pattern is formed and a backside opposite the frontside, an electronic element on an active region in which the active pattern is formed, a frontside interconnection structure, in which a power line connected to the electronic element is disposed, on the frontside of the substrate, a backside interconnection structure, which includes a backside line connected to the electronic element, on the backside of the substrate, a through via connecting the power line with the backside line by passing through the substrate, and a dummy mold structure on the frontside interconnection structure, having a first cross-sectional thickness greater than a second cross-sectional thickness of the frontside interconnection structure.