FERROELECTRIC DEVICES AND FERROELECTRIC MEMORY CELLS

A ferroelectric device includes an electrode, another electrode, and a ferroelectric structure between the electrode and the another electrode. The ferroelectric structure includes one or more portions of bismuth oxide, and one or more portions of at least one metal oxide comprising hafnium-containing oxide, zirconium-containing oxide, or a combination thereof. A ferroelectric memory cell includes a source region, a drain region, and a capacitor in electrical communication with the drain region. The capacitor includes an electrode and a ferroelectric structure neighboring the electrode. The ferroelectric structure includes a first material comprising a first metal oxide, a second material comprising bismuth oxide, and a third material comprising a second metal oxide. The ferroelectric structure also includes a dopant in an amount of between about 0.1 atomic percent and about 25.0 atomic percent based on non-oxygen atoms of the ferroelectric structure.