APPARATUS AND METHOD FOR TWO-STEP READ OF RESISTIVE RANDOM ACCESS MEMORY

An apparatus is provided that includes a memory array and a control circuit. The memory array includes non-volatile memory cells each including a resistive random access memory element. The control circuit is configured to receive a read command that specifies an address of a first group of the non-volatile memory cells, use a first predetermined read reference value to perform a first read of the first group of the non-volatile memory cells to provide first read data, while performing the first read, retrieve from a memory a second predetermined read reference value corresponding to the specified address, and in response to a condition being satisfied regarding the first read data, use the second predetermined read reference value to perform a second read of the first group of the non-volatile memory cells to provide second read data.