SEMICONDUCTOR ELECTROCHEMICAL PLATING APPARATUS AND METHOD

A semiconductor electrochemical plating (ECP) tool includes: a plating cell which receives an ECP solution therein; a support onto which a semiconductor substrate is selectively secured, the support being controllable to selectively dip the semiconductor substrate into ECP solution contained in the plating cell; a recirculation system including a reservoir that receives an overflow of ECP solution from the plating cell, the ECP solution being recirculated from the reservoir back to the plating cell; a bubble monitoring system that detects gas bubbles within the ECP solution; and a degassing system that inhibits at least one of gas bubble formation, nucleation and growth within the ECP solution, wherein the degassing system is controlled at least in part based upon gas bubble detection by the bubble monitoring system.