COMPOSITION AND MANUFACTURING METHOD OF SEMICONDUCTOR ELEMENT

An object of the present invention is to provide a composition in which, even in a case of being used after a lapse of a predetermined period from production, removal performance of residues and anticorrosion properties of a tungsten-containing film are excellent, and deterioration of electrical pro...

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Bibliographische Detailangaben
Hauptverfasser: INABA, Tadashi, MURO, Naotsugu, KAMIMURA, Tetsuya
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:An object of the present invention is to provide a composition in which, even in a case of being used after a lapse of a predetermined period from production, removal performance of residues and anticorrosion properties of a tungsten-containing film are excellent, and deterioration of electrical properties of the tungsten-containing film can be suppressed; and to provide a manufacturing method of a semiconductor element.The composition of the present invention contains sorbic acid, citric acid, an amine-containing compound which is at least one selected from the group consisting of ammonia, an organic amine, a quaternary ammonium compound, and salts thereof, a specific compound which has at least one group selected from the group consisting of a phosphono group and a phosphoric acid group, and water, in which a pH at 25° C. is 4.0 to 9.0.