Post-Dry Etching Photoresist And Metal Containing Residue Removal Formulation
The disclosed and claimed subject matter relates to a stripping composition having a controlled oxide etch and ITO (Indium Tin oxide) etch as well as sidewall polymer and polymer etch residue removal capability and to a process for stripping and etching utilizing the composition.
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Format: | Patent |
Sprache: | eng |
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Zusammenfassung: | The disclosed and claimed subject matter relates to a stripping composition having a controlled oxide etch and ITO (Indium Tin oxide) etch as well as sidewall polymer and polymer etch residue removal capability and to a process for stripping and etching utilizing the composition. |
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