Post-Dry Etching Photoresist And Metal Containing Residue Removal Formulation

The disclosed and claimed subject matter relates to a stripping composition having a controlled oxide etch and ITO (Indium Tin oxide) etch as well as sidewall polymer and polymer etch residue removal capability and to a process for stripping and etching utilizing the composition.

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Bibliographische Detailangaben
Hauptverfasser: Chang, Chung-Yi, Liu, Wen Dar, Lee, Yi-Chia, Ge, Jhih-Kuei, Wu, Aiping
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:The disclosed and claimed subject matter relates to a stripping composition having a controlled oxide etch and ITO (Indium Tin oxide) etch as well as sidewall polymer and polymer etch residue removal capability and to a process for stripping and etching utilizing the composition.