MRAM DEVICE WITH HEXAGONAL SHAPED ELECTRODES

A semiconductor device including a magnetic tunnel junction (MTJ) stack, where a cross section of a bottom electrode of the stack includes a hexagonal profile. A semiconductor device including a lower word line, a magnetic tunnel junction (MTJ) stack, where a cross section of a first electrode of the MTJ stack comprises a hexagonal profile. A method including forming a bottom electrode, the bottom electrode includes a side surface including a width at a middle section of the bottom electrode greater than a width at a lower surface of the bottom electrode, and the width at the middle section of the bottom electrode greater than a width at an upper surface of the bottom electrode.