MAGNETIC-TUNNEL-JUNCTION DEVICES FOR A MAGNETIC-FIELD SENSOR

Structures including a magnetic-tunnel-junction device and methods of forming such structures. The structure comprises a magnetic-tunnel-junction device that includes a first electrode having a first sidewall, a second electrode having a second sidewall facing the first sidewall of the first electro...

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Bibliographische Detailangaben
Hauptverfasser: Siah, Soh Yun, You, Young Seon, Simon, Chan Tze Ho, Yamane, Kazutaka, Naik, Vinayak Bharat, Toh, Eng-Huat
Format: Patent
Sprache:eng
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Zusammenfassung:Structures including a magnetic-tunnel-junction device and methods of forming such structures. The structure comprises a magnetic-tunnel-junction device that includes a first electrode having a first sidewall, a second electrode having a second sidewall facing the first sidewall of the first electrode, a pinned layer adjacent to the first sidewall of the first electrode, a free layer adjacent to the second sidewall of the second electrode, and a tunnel barrier layer between the free layer and the pinned layer.