SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF

A semiconductor device includes a first semiconductor die. The semiconductor device includes a redistribution structure disposed over a first side of the first semiconductor die and comprising a plurality of layers. At least a first one of the plurality of layers comprises a first power/ground plane...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Chang, Fong-yuan, Chen, Shuo-Mao, Hsu, Hung-Jen
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:A semiconductor device includes a first semiconductor die. The semiconductor device includes a redistribution structure disposed over a first side of the first semiconductor die and comprising a plurality of layers. At least a first one of the plurality of layers comprises a first power/ground plane embedded in a dielectric material and configured to provide a first supply voltage for the first semiconductor die. The first power/ground plane encloses a plurality of first conductive structures that are each operatively coupled to the first semiconductor die, and a plurality of second conductive structures scattered around the plurality of first conductive structures.