METHOD AND APPARATUS FOR COPPER PLATING IN SEMICONDUCTOR DEVICES

Some implementations described herein provide techniques and apparatuses for forming a copper structure adjacent to a multi-layer film structure included in a semiconductor device. The techniques include using an electroplating process to form the copper structure adjacent to the multi-layer film structure, wherein a pre-layer of chlorine molecules coats a seed layer of the multi-layer film structure during the electroplating process. During formation of the copper structure, a chlorine-enriched interface region (e.g., a control layer including a copper chelate material with chlorine) may be formed between the copper structure and the multi-layer film structure including the seed layer. The chlorine-enriched interface region may reduce a likelihood of electromigration and/or stress migration within the semiconductor device.