DIFFERENT SOURCE/DRAIN PROFILES FOR N-TYPE FINFETS AND P-TYPE FINFETS

DIFFERENT SOURCE/DRAIN PROFILES FOR N-TYPE FINFETS AND P-TYPE FINFETS

A method includes etching a first and a second semiconductor fin to form a first and a second recesses, epitaxially growing an n-type source/drain region comprising a first portion and a second portion from the first and the second recesses, and a first middle portion in between and having a concave...

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1. Verfasser: More, Shahaji B
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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description A method includes etching a first and a second semiconductor fin to form a first and a second recesses, epitaxially growing an n-type source/drain region comprising a first portion and a second portion from the first and the second recesses, and a first middle portion in between and having a concave top surface. A first contact opening is formed extending into the n-type source/drain region and having a first V-shaped bottom. The method further includes etching a third and a fourth semiconductor fin to form a third and a fourth recesses, and forming a p-type source/drain region including a third portion and a third portion grown from the third and the fourth recesses, and a second middle portion in between and having a convex top surface. A second contact opening is formed and has a second V-shaped bottom, with a tip of the second V-shaped bottom being downwardly pointing.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2024387289A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2024387289A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2024387289A13</originalsourceid><addsrcrecordid>eNrjZHB18XRzcw1y9QtRCPYPDXJ21XcJcvT0UwgI8nfz9HENVnDzD1Lw0w2JDHBVcPP0c3MNCVZw9HNRCEAR4mFgTUvMKU7lhdLcDMpAYWcP3dSC_PjU4oLE5NS81JL40GAjAyMTYwtzIwtLR0Nj4lQBACw0LPc</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>DIFFERENT SOURCE/DRAIN PROFILES FOR N-TYPE FINFETS AND P-TYPE FINFETS</title><source>esp@cenet</source><creator>More, Shahaji B</creator><creatorcontrib>More, Shahaji B</creatorcontrib><description>A method includes etching a first and a second semiconductor fin to form a first and a second recesses, epitaxially growing an n-type source/drain region comprising a first portion and a second portion from the first and the second recesses, and a first middle portion in between and having a concave top surface. A first contact opening is formed extending into the n-type source/drain region and having a first V-shaped bottom. The method further includes etching a third and a fourth semiconductor fin to form a third and a fourth recesses, and forming a p-type source/drain region including a third portion and a third portion grown from the third and the fourth recesses, and a second middle portion in between and having a convex top surface. A second contact opening is formed and has a second V-shaped bottom, with a tip of the second V-shaped bottom being downwardly pointing.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20241121&amp;DB=EPODOC&amp;CC=US&amp;NR=2024387289A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76294</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20241121&amp;DB=EPODOC&amp;CC=US&amp;NR=2024387289A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>More, Shahaji B</creatorcontrib><title>DIFFERENT SOURCE/DRAIN PROFILES FOR N-TYPE FINFETS AND P-TYPE FINFETS</title><description>A method includes etching a first and a second semiconductor fin to form a first and a second recesses, epitaxially growing an n-type source/drain region comprising a first portion and a second portion from the first and the second recesses, and a first middle portion in between and having a concave top surface. A first contact opening is formed extending into the n-type source/drain region and having a first V-shaped bottom. The method further includes etching a third and a fourth semiconductor fin to form a third and a fourth recesses, and forming a p-type source/drain region including a third portion and a third portion grown from the third and the fourth recesses, and a second middle portion in between and having a convex top surface. A second contact opening is formed and has a second V-shaped bottom, with a tip of the second V-shaped bottom being downwardly pointing.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHB18XRzcw1y9QtRCPYPDXJ21XcJcvT0UwgI8nfz9HENVnDzD1Lw0w2JDHBVcPP0c3MNCVZw9HNRCEAR4mFgTUvMKU7lhdLcDMpAYWcP3dSC_PjU4oLE5NS81JL40GAjAyMTYwtzIwtLR0Nj4lQBACw0LPc</recordid><startdate>20241121</startdate><enddate>20241121</enddate><creator>More, Shahaji B</creator><scope>EVB</scope></search><sort><creationdate>20241121</creationdate><title>DIFFERENT SOURCE/DRAIN PROFILES FOR N-TYPE FINFETS AND P-TYPE FINFETS</title><author>More, Shahaji B</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2024387289A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2024</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>More, Shahaji B</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>More, Shahaji B</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>DIFFERENT SOURCE/DRAIN PROFILES FOR N-TYPE FINFETS AND P-TYPE FINFETS</title><date>2024-11-21</date><risdate>2024</risdate><abstract>A method includes etching a first and a second semiconductor fin to form a first and a second recesses, epitaxially growing an n-type source/drain region comprising a first portion and a second portion from the first and the second recesses, and a first middle portion in between and having a concave top surface. A first contact opening is formed extending into the n-type source/drain region and having a first V-shaped bottom. The method further includes etching a third and a fourth semiconductor fin to form a third and a fourth recesses, and forming a p-type source/drain region including a third portion and a third portion grown from the third and the fourth recesses, and a second middle portion in between and having a convex top surface. A second contact opening is formed and has a second V-shaped bottom, with a tip of the second V-shaped bottom being downwardly pointing.</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title DIFFERENT SOURCE/DRAIN PROFILES FOR N-TYPE FINFETS AND P-TYPE FINFETS
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-23T02%3A25%3A14IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=More,%20Shahaji%20B&rft.date=2024-11-21&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2024387289A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true