DIFFERENT SOURCE/DRAIN PROFILES FOR N-TYPE FINFETS AND P-TYPE FINFETS

A method includes etching a first and a second semiconductor fin to form a first and a second recesses, epitaxially growing an n-type source/drain region comprising a first portion and a second portion from the first and the second recesses, and a first middle portion in between and having a concave top surface. A first contact opening is formed extending into the n-type source/drain region and having a first V-shaped bottom. The method further includes etching a third and a fourth semiconductor fin to form a third and a fourth recesses, and forming a p-type source/drain region including a third portion and a third portion grown from the third and the fourth recesses, and a second middle portion in between and having a convex top surface. A second contact opening is formed and has a second V-shaped bottom, with a tip of the second V-shaped bottom being downwardly pointing.