MULTI-THRESHOLD VOLTAGE INTEGRATION SCHEME FOR COMPLEMENTARY FIELD EFFECT TRANSISTORS

Methods of manufacturing electronic devices are described. Embodiments of the present disclosure advantageously provide methods of manufacturing electronic devices, e.g., complementary field-effect transistors (CFETs) that meet reduced thickness, reduced leakage, lower thermal budget, and Vt require...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Lin, San-Kuei, Subrahmanyan, Pradeep K
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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