METHOD OF MANUFACTURING SEMICONDUCTOR ELEMENT BY USING ATOMIC LAYER ETCHING (ALE) PROCESS

A method of manufacturing a semiconductor element includes placing a structure, the structure including a substrate and a first metal-containing film disposed on the substrate, fluorinating at least one atomic layer from an exposed surface of the first metal-containing film by supplying a fluorinati...

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Bibliographische Detailangaben
Hauptverfasser:	Park, Sangwuk, Hong, Jungpyo, Chae, Heeyeop, Lee, Jihye, Park, Jinwoo, Kim, Yongjae, Lee, Yuna
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	A method of manufacturing a semiconductor element includes placing a structure, the structure including a substrate and a first metal-containing film disposed on the substrate, fluorinating at least one atomic layer from an exposed surface of the first metal-containing film by supplying a fluorinating gas to the structure to form a fluorinated atomic layer, and etching the fluorinated atomic layer of the first metal-containing film by supplying an etching gas to the structure, wherein the etching gas includes an inert gas in a plasma state.