THREE-DIMENSIONAL MEMORY DEVICE INCLUDING TRENCH BRIDGE STRUCTURES HAVING DIFFERENT VOLUMES AND METHODS OF FORMING THE SAME

THREE-DIMENSIONAL MEMORY DEVICE INCLUDING TRENCH BRIDGE STRUCTURES HAVING DIFFERENT VOLUMES AND METHODS OF FORMING THE SAME

A three-dimensional memory device includes at least one alternating stack of insulating layers and electrically conductive layers, memory openings vertically extending through the at least one alternating stack, memory opening fill structures located in the memory openings, and a laterally-extending...

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Bibliographische Detailangaben
Hauptverfasser: RASHIDI, Seyyed Ehsan Esfahani, ESMAILI, Ehsan, MATSUNO, Koichi, YU, Jixin, ALSMEIER, Johann
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
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Zusammenfassung:A three-dimensional memory device includes at least one alternating stack of insulating layers and electrically conductive layers, memory openings vertically extending through the at least one alternating stack, memory opening fill structures located in the memory openings, and a laterally-extending trench fill structure contacting a first lengthwise sidewall of the at least one alternating stack, and including a first-type dielectric bridge structure having a first volume, a second-type dielectric bridge structure having a second volume greater than the first volume, and a trench dielectric material portion.