METHOD OF FORMING A RUTHENIUM-CONTAINING LAYER AND LAMINATE

[Purpose] To provide a method of forming a ruthenium-containing layer and a laminate, wherein the ruthenium-containing layer is selectively formed, as a protective layer capable of suppressing generation of etching residues, on a mask surface for pattern formation that is formed on a substrate, with...

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Bibliographische Detailangaben
Hauptverfasser:	GIRARD, Jean-Marc, ARTEAGA MULLER, Rocio Alejandra, PALLEM, Venkateswara R, GATINEAU, Julien
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	[Purpose] To provide a method of forming a ruthenium-containing layer and a laminate, wherein the ruthenium-containing layer is selectively formed, as a protective layer capable of suppressing generation of etching residues, on a mask surface for pattern formation that is formed on a substrate, without the need for forming a selective attractant element. [Solution] A method, which comprises a preparation step of providing a substrate having an oxidizable layer, and a deposition step of depositing a ruthenium-containing layer on the oxidizable layer by using a ruthenium tetraoxide through vapour deposition, wherein the oxidizable layer contains carbon atoms.