RESISTIVE MEMORY CELL

A resistive memory cell includes a lower electrode based on one of the following materials: titanium nitride TiN, tantalum nitride TaN, tantalum Ta, copper Cu, tungsten W, platinum Pt, gold Au or silver Ag, an upper electrode, an active layer having a first contact surface with the lower electrode and a second contact surface with the upper electrode, the active layer including a zone, referred to as the local zone, the local zone being made of a material including vanadium, oxygen and Ti or Ta or Cu or W or Pt or Au or Ag, the local zone extending from the first contact surface, the rest of the active layer being made of conductive vanadium oxide.