SEMICONDUCTOR DEVICE

Prevented is local increase of a temperature of a chip in a semiconductor device including a diode region and an IGBT region. A semiconductor device includes a chip of an RC-IGBT including an IGBT region functioning as an IGBT and a plurality of diode regions functioning as a diode. The plurality of...

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Bibliographische Detailangaben
Hauptverfasser:	SONEDA, Shinya, SAKAGUCHI, Kosuke
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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Beschreibung
Zusammenfassung:	Prevented is local increase of a temperature of a chip in a semiconductor device including a diode region and an IGBT region. A semiconductor device includes a chip of an RC-IGBT including an IGBT region functioning as an IGBT and a plurality of diode regions functioning as a diode. The plurality of diode regions are disposed to form an island-like shape in an effective region which is a region made up of the IGBT region and the diode regions. When a length of one side of one of the diode regions is WD, an interval of the diode regions adjacent to each other is WI, a length of one side of the effective region is WC, and a thickness of the chip is t, satisfied are relationships of 2t