INTEGRATED CIRCUIT METAL GATE STRUCTURE

A semiconductor device includes a gate dielectric layer and a gate electrode formed on the gate dielectric layer. The gate electrode includes a first metal layer, a second metal layer, and a third metal layer. The second layer includes metal and oxygen. The first layer is first layer over the gate d...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Hou, Yong-Tian, Hung, Cheng-Lung, Chen, Chien-Hao, Chao, Yuan-Shun
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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