SUPERLATTICE EPITAXIAL STRUCTURE WITH VARYING LATTICE PARAMETER DIFFERENCES

A superlattice epitaxial structure epitaxially grown on a substrate. The superlattice epitaxial structure includes epitaxial layers composing multiple layer sequences. Each of the multiple layer sequences includes a corresponding lower layer and a corresponding upper layer epitaxially grown on the c...

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Bibliographische Detailangaben
1. Verfasser: Canizares, Claudio Andres
Format: Patent
Sprache:eng
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Zusammenfassung:A superlattice epitaxial structure epitaxially grown on a substrate. The superlattice epitaxial structure includes epitaxial layers composing multiple layer sequences. Each of the multiple layer sequences includes a corresponding lower layer and a corresponding upper layer epitaxially grown on the corresponding lower layer. The lattice parameter of the epitaxial layers alternate lower and higher (or higher and lower) moving up through the superlattice epitaxial structure. The difference in lattice parameters in the neighboring lower and higher epitaxial layers may also vary moving up through the epitaxial structure. Thus, by varying the difference between the lattice parameters, the strain endured at that level may be engineered with the effect of increasing the electrical resistance seen vertically through the superlattice epitaxial structure, thus allowing the structure to be thinner and/or operate with higher voltages.