IMAGE SENSOR AND METHOD OF MANUFACTURING THE SAME

IMAGE SENSOR AND METHOD OF MANUFACTURING THE SAME

The present disclosure relates to an image sensor, and the image sensor of the present disclosure may include a plurality of pixels, each of which includes a photovoltaic device configured to convert incident light into charge, and a capacitor configured to store the charge, the capacitor of each of...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
1. Verfasser: Shim, Eun Sub
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:The present disclosure relates to an image sensor, and the image sensor of the present disclosure may include a plurality of pixels, each of which includes a photovoltaic device configured to convert incident light into charge, and a capacitor configured to store the charge, the capacitor of each of the plurality of pixels may include a first electrode and a second electrode that overlap each other, and a dielectric layer that is between the first electrode and the second electrode, the plurality of pixels may include a first pixel and a second pixel adjacent to each other, and the second electrode of the first pixel and the second electrode of the second pixel may be integral with each other.