ISOLATION MODULE FORMATION FOR BACKSIDE POWER DELIVERY APPLICATION

Semiconductor devices and methods of manufacturing the same are described. The method includes combining selective recess of a sacrificial layer and isotropic etching of a silicon layer in order to form a protective cap that will allow the silicon layer of the substrate to be etched without affectin...

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Bibliographische Detailangaben
Hauptverfasser: Basker, Veeraraghavan S, Lee, Byeong Chan, Kim, Kyoung Ha
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:Semiconductor devices and methods of manufacturing the same are described. The method includes combining selective recess of a sacrificial layer and isotropic etching of a silicon layer in order to form a protective cap that will allow the silicon layer of the substrate to be etched without affecting the sacrificial layer.