BACKSIDE SELF ALIGNED SKIP VIA

BACKSIDE SELF ALIGNED SKIP VIA

A semiconductor structure including a gate contact above and in direct contact with a top surface of a gate. a backside wiring layer below a backside power delivery network. and a contact via extending between the gate contact and the backside wiring layer.

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Bibliographische Detailangaben
Hauptverfasser: Clevenger, Lawrence A, Anderson, Brent A, Chu, Albert M, Senapati, Biswanath, Wolpert, David, Xie, Ruilong, Lanzillo, Nicholas Anthony, Vega, Reinaldo, Sigal, Leon
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A semiconductor structure including a gate contact above and in direct contact with a top surface of a gate. a backside wiring layer below a backside power delivery network. and a contact via extending between the gate contact and the backside wiring layer.