TECHNIQUES FOR DICING BONDED WAFERS USING LASER TECHNOLOGIES

Methods, systems, and devices implementing techniques for dicing bonded wafers using laser technologies are described. A bonded wafer includes an optically transmissive substrate bonded with a semiconductor substrate. The optically transmissive substrate is irradiated using a first laser technology associated with perforating the optically transmissive substrate to form damage tracks. The semiconductor substrate is irradiated using a second laser technology associated with forming damage regions within the semiconductor substrate. The damage regions of the semiconductor substrate are aligned with the damage tracks of the optically transmissive substrate during irradiation of the semiconductor substrate or the optically transmissive substrate, forming an aligned region through the bonded wafer with a relatively high likelihood for fracture. After irradiating the optically transmissive substrate and the semiconductor substrate, one or more forces may be applied to the bonded wafer to separate the bonded wafer into respective dies along the aligned region.