PROCESS CONTROL METHOD FOR PATTERN WAFER INDEX POLISHING

In one embodiment, a method of processing a substrate in a chemical mechanical polishing (CMP) system, comprises determining an orientation of a substrate relative to a first carrier head. The method further includes initiating a polishing process of a surface of the substrate engaged with a polishi...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	ZHANG, Jimin, TANG, Jianshe, BROWN, Brian J, LEE, Harry Q
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS DRESSING OR CONDITIONING OF ABRADING SURFACES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING PERFORMING OPERATIONS POLISHING SEMICONDUCTOR DEVICES TRANSPORTING
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Beschreibung
Zusammenfassung:	In one embodiment, a method of processing a substrate in a chemical mechanical polishing (CMP) system, comprises determining an orientation of a substrate relative to a first carrier head. The method further includes initiating a polishing process of a surface of the substrate engaged with a polishing pad. The method further includes scanning, during the polishing process, a first portion of the surface of the substrate repeatedly using at least one endpoint sensor coupled to the polishing pad to generate orientation dependent scan data of a property of the first portion of the surface. The method further includes comparing the orientation dependent scan data to a library of orientation dependent scan data to determine when the endpoint of the polishing process has been reached.