SEMICONDUCTOR STRUCTURE WITH MULTI-LAYERS FILM

A semiconductor structure includes a grating coupler structure, a circuit component separated from the grating coupler structure, an inter level dielectric layer, a capping layer over the inter level dielectric layer, and a passivation layer over the capping layer. The inter level dielectric layer h...

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Bibliographische Detailangaben
Hauptverfasser: HSU, SUI-YING, TSUI, YINGKIT FELIX, YANG, JING-HWANG, SHIH, CHIH-TSUNG, LIU, WEI-KANG
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:A semiconductor structure includes a grating coupler structure, a circuit component separated from the grating coupler structure, an inter level dielectric layer, a capping layer over the inter level dielectric layer, and a passivation layer over the capping layer. The inter level dielectric layer has a first refractive index, the capping layer has second refractive index, and the passivation layer has a third refractive index. The second refractive index is greater than the first refractive index, and is greater than the third refractive index.