MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME

A memory device and a method for manufacturing the same are provided. The memory device includes drain pillar structures, source pillar structures, memory structures surrounding the drain pillar structures respectively, a channel structure, and a gate structure surrounding the drain pillar structure...

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Hauptverfasser: LEE, Feng-Min, LAI, Erh-Kun
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:A memory device and a method for manufacturing the same are provided. The memory device includes drain pillar structures, source pillar structures, memory structures surrounding the drain pillar structures respectively, a channel structure, and a gate structure surrounding the drain pillar structures, the source pillar structures and the channel structure. The channel structure is divided into arc channel parts by the drain pillar structures and the source pillar structures.