SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

A semiconductor device includes a first active pattern including a first edge portion and a second edge portion, which are spaced apart from each other in a first direction; a first word line between the first edge portion of the first active pattern and the second edge portion of the first active p...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: KIM, Bongsoo, YOON, Chan-Sic, LEE, Kiseok, KIM, Jongmin
Format: Patent
Sprache:eng
Schlagworte:
ELECTRICITY
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Beschreibung
Zusammenfassung:A semiconductor device includes a first active pattern including a first edge portion and a second edge portion, which are spaced apart from each other in a first direction; a first word line between the first edge portion of the first active pattern and the second edge portion of the first active pattern and extending in a second direction that crosses the first direction; a bit line on the first edge portion of the first active pattern and extending in a third direction that crosses the first direction and the second direction; and a storage node contact on the second edge portion of the first active pattern, wherein a top surface of the first edge portion is at a level higher than a top surface of the second edge portion.