SEMICONDUCTOR DEVICE HAVING A FIELD PLATE STRUCTURE

SEMICONDUCTOR DEVICE HAVING A FIELD PLATE STRUCTURE

A semiconductor device includes: a silicon layer having an electrically insulated backside and a thickness in a range of 10 μm to 200 μm between a frontside of the silicon layer and the electrically insulated backside; a high voltage region and a low voltage region formed in the silicon layer and la...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Schippel, Christian, Mauder, Anton, Priefert, Dirk, Kuenzig, Thomas, Mueller-Meskamp, Lars, Winzer, Annett, Rudolf, Ralf
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A semiconductor device includes: a silicon layer having an electrically insulated backside and a thickness in a range of 10 μm to 200 μm between a frontside of the silicon layer and the electrically insulated backside; a high voltage region and a low voltage region formed in the silicon layer and laterally spaced apart from one another; and a first field plate structure extending from the frontside into the silicon layer. The first field plate structure includes a field plate laterally separated from the silicon layer by a dielectric material and/or a pn junction.