SEMICONDUCTOR DEVICE INCLUDING A CAPACITOR

A capacitor structure for a power semiconductor device includes a semiconductor substrate, an isolation insulating layer having a ring-shape and including an outer periphery and an inner periphery defining an opening region, a first electrode disposed on the isolation insulating layer, a dielectric...

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Bibliographische Detailangaben
Hauptverfasser: CHUNG, Chiu-Hua, CHEN, Hong-Yang, LIN, Hung-Chou, WU, Kuo-Ming, LIN, Tian Sheng, CHIU, Yi-Cheng, CHEN, Yi-Min
Format: Patent
Sprache:eng
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Zusammenfassung:A capacitor structure for a power semiconductor device includes a semiconductor substrate, an isolation insulating layer having a ring-shape and including an outer periphery and an inner periphery defining an opening region, a first electrode disposed on the isolation insulating layer, a dielectric layer disposed on the first electrode, and a second electrode disposed on the dielectric layer.