LOW CAPACITANCE POLY-BOUNDED SILICON CONTROLLED RECTIFIERS

LOW CAPACITANCE POLY-BOUNDED SILICON CONTROLLED RECTIFIERS

Low capacitance poly-bounded silicon controlled rectifiers (SCRs) are disclosed herein. In certain embodiments, an SCR includes an n-type well (NW) and a p-type well (PW) formed adjacent to one another in a substrate. The SCR further includes active regions including p-type active (P+) fin regions o...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Hajjar, Jean-Jacques, Zhou, Yuanzhong, Parthasarathy, Srivatsan, Huang, Shudong
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:Low capacitance poly-bounded silicon controlled rectifiers (SCRs) are disclosed herein. In certain embodiments, an SCR includes an n-type well (NW) and a p-type well (PW) formed adjacent to one another in a substrate. The SCR further includes active regions including p-type active (P+) fin regions over the NW and connected to an anode terminal of the SCR, and n-type active (N+) fin regions over the PW and connected to a cathode terminal of the SCR. The SCR further includes polysilicon gate regions over the PW and NW that serve to separate the active regions while also improving the SCR's turn-on speed in response to fast overstress transients.