SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

A semiconductor device according to some example embodiments may include: a substrate having a first region and a second region; a lower interlayer insulating layer on the first region and the second region of the substrate; an upper interlayer insulating layer on the lower interlayer insulating layer; a via structure penetrating through the upper interlayer insulating layer in the first region; a plurality of metal wirings extending in a first direction on the via structure and electrically connected to the via structure; trenches on a same level as that of the via structure and in the upper interlayer insulating layer, in the second region; and a dummy wiring layer having a curved structure along upper surfaces of the trenches, the upper interlayer insulating layer, and the lower interlayer insulating layer.