SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME

The present disclosure relates to a semiconductor device and an electronic system including the same, and the semiconductor device according to an embodiment includes: a first substrate; a wire portion disposed on the first substrate and including a wire layer and an insulation layer covering the wire layer; a second substrate disposed on the wire portion; a first gate stacking structure including an interlayer insulating layer and a gate electrode alternately stacked on the second substrate; a second gate stacking structure including an interlayer insulating layer and a gate electrode alternately stacked on the first gate stacking structure; and a channel structure passing through the first gate stacking structure and the second gate stacking structure and connected to the second substrate, wherein the second substrate includes a first material layer and a second material layer disposed on the first material layer, the first material layer includes polysilicon including a first material, the second material layer includes polysilicon including a second material that is different from the first material, and the insulation layer is disposed between the wire layer and the second substrate, and a first side of the first material layer contacts the insulation layer.