SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF

The present disclosure provides a semiconductor device and a fabricating method thereof includes a source structure, a drain structure, a gate structure, a bottom dielectric layer, a gate dielectric layer, a channel structure, and a metal nitride layer. The source structure and the drain structure a...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	YU, Yongjian, WU, Gang, KONG, Guoguo, Yang, Wangqin, GE, Mingru, HE, Shiwei
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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