SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF

The present disclosure provides a semiconductor device and a fabricating method thereof includes a source structure, a drain structure, a gate structure, a bottom dielectric layer, a gate dielectric layer, a channel structure, and a metal nitride layer. The source structure and the drain structure are stacked in a vertical direction, and the gate structure is between the drain structure and the source structure. The bottom dielectric layer is disposed between the drain structure and the source structure. The channel structure is disposed between the drain structure and the source structure and is electrically connected the drain structure and the source structure, and the channel structure is partially disposed in the gate structure. The gate dielectric layer is disposed between the channel structure and the gate structure. The metal nitride layer is disposed between the gate dielectric layer and the gate structure.