METHOD AND APPARATUS FOR PROCESSING SUBSTRATE

A method of processing a substrate includes: removing a silicon oxide portion contained in an oxide film on a surface of a metal silicide layer by supplying a hydrogen fluoride gas and an ammonia gas to the oxide film so as to react with the silicon oxide portion contained in the oxide film, wherein...

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Bibliographische Detailangaben
Hauptverfasser:	ISHIZAKA, Tadahiro, SAKUMA, Takashi
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	A method of processing a substrate includes: removing a silicon oxide portion contained in an oxide film on a surface of a metal silicide layer by supplying a hydrogen fluoride gas and an ammonia gas to the oxide film so as to react with the silicon oxide portion contained in the oxide film, wherein the metal silicide layer is provided by being stacked in a recess formed in an insulator layer which is stacked on a silicon-containing layer; and removing a metal oxide portion by supplying a metal halide gas to the oxide film so as to react with the metal oxide portion contained in the oxide film.