NANOCRYSTALLINE DIAMOND WITH AMORPHOUS INTERFACIAL LAYER

Methods of depositing a nanocrystalline diamond film are described. The method may be used in the manufacture of integrated circuits. Methods include treating a substrate with a plasma to form a treated substrate surface, incubating the treated substrate with a carbon-rich plasma to nucleate diamond...

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Bibliographische Detailangaben
Hauptverfasser: Sahmuganathan, Vicknesh, Kawasaki, Masahiro, Tan, Sze Chieh, Valencia, Christian W, Wang, Jenn-Yue, Sudijono, John, Chua, Thai Cheng
Format: Patent
Sprache:eng
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Zusammenfassung:Methods of depositing a nanocrystalline diamond film are described. The method may be used in the manufacture of integrated circuits. Methods include treating a substrate with a plasma to form a treated substrate surface, incubating the treated substrate with a carbon-rich plasma to nucleate diamond particles on the treated substrate surface, followed by treating the substrate with a plasma to form a nanocrystalline diamond film. The resulting nanocrystalline diamond films are formed on an interfacial oxide-rich amorphous layer between the nanocrystalline diamond film and a silicon substrate.