HIGHLY SENSITIVE THERMOELECTRIC-BASED INFRARED DETECTOR WITH HIGH CMOS INTEGRATION

HIGHLY SENSITIVE THERMOELECTRIC-BASED INFRARED DETECTOR WITH HIGH CMOS INTEGRATION

A CMOS-MEMS integrated device and a method for forming such a device are disclosed. The integrated device includes a double released MEMS infrared sensor. The double released MEMS sensor is a free-standing sensor over a lower sensor cavity which is etched into the substrate of the device. The free-s...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: KROPELNICKI, Piotr, Ang, Wan Chia
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
COLORIMETRY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT,POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED,VISIBLE OR ULTRA-VIOLET LIGHT
MEASURING
MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICALDEVICES
MICROSTRUCTURAL TECHNOLOGY
PERFORMING OPERATIONS
PHYSICS
PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTUREOR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
RADIATION PYROMETRY
SEMICONDUCTOR DEVICES
TESTING
TRANSPORTING
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Beschreibung
Zusammenfassung:A CMOS-MEMS integrated device and a method for forming such a device are disclosed. The integrated device includes a double released MEMS infrared sensor. The double released MEMS sensor is a free-standing sensor over a lower sensor cavity which is etched into the substrate of the device. The free-spending MEMS sensor is devoid of a support dielectric membrane which supports the MEMS sensor, resulting in the MEMS sensor being suspended over the lower sensor cavity. The support dielectric is removed by a second release process. The second release process may also remove a protective dielectric layer over the MEMS sensor. The MEMS sensor without the protective dielectric layer enhances sensor sensitivity. In other cases, the free-standing MEMS sensor may include an absorber thereover. The absorber enhances sensor sensitivity.