Memory Circuitry And Methods Used In Forming Memory Circuitry
Memory circuitry comprising strings of memory cells comprises a stack comprising vertically-alternating insulative tiers and conductive tiers. Channel-material strings of memory cells extend through the insulative tiers and the conductive tiers in a memory-array region. The insulative tiers comprise...
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Zusammenfassung: | Memory circuitry comprising strings of memory cells comprises a stack comprising vertically-alternating insulative tiers and conductive tiers. Channel-material strings of memory cells extend through the insulative tiers and the conductive tiers in a memory-array region. The insulative tiers comprise a first silicon oxide. The insulative tiers and the conductive tiers extend from the memory-array region into a stair-step region. The stair-step region comprises a flight of stairs. The stairs individually comprise a tread comprising conductive material of one of the conductive tiers. Individual of the treads comprise a second silicon oxide directly above the conductive material of the one conductive tier. The second silicon oxide comprises one or more of boron and phosphorus at a total concentration that is greater than a total concentration of one or more of boron and phosphorus, if any, that is in the first silicon oxide that is directly below the second silicon oxide. A conductive-via construction extends downwardly from and directly below the conductive material of the individual treads to circuitry that is directly below the stack. The conductive-via construction comprises conductor material that directly electrically couples together the conductive material of one of the individual treads and the circuitry that is directly below the stack. Methods are disclosed. |
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