LIGHT-EMITTING DIODE AND LIGHT-EMITTING DEVICE

A light-emitting diode and a light-emitting device are provided. In the light-emitting diode, a first mesa including an active layer satisfies a perimeter-to-area ratio2⁢π⁢ss≤γ≤2⁢((sL⁢1)+L⁢1)sunder a same light-emitting area. Under the same light-emitting area of the active layer, an exposed portion...

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Bibliographische Detailangaben
Hauptverfasser:	WU, Zhiwei, XIONG, Weiping, KUO, Huanshao, PENG, Yuren, GAO, Di, WANG, Yanyun
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	A light-emitting diode and a light-emitting device are provided. In the light-emitting diode, a first mesa including an active layer satisfies a perimeter-to-area ratio2⁢π⁢ss≤γ≤2⁢((sL⁢1)+L⁢1)sunder a same light-emitting area. Under the same light-emitting area of the active layer, an exposed portion on a sidewall of the first mesa is less, and thus problems of light absorption and non-radiative recombination caused by a defect of the sidewall of a small-sized light-emitting diode are reduced during working at a low current. In addition, a non-planar light-emitting surface can improve a light-emitting probability of the sidewall of the light-emitting diode, and an external light-emitting efficiency of the light-emitting diode is further improved.